PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • Subsequently an oxide such as silicon oxide is deposited on the wafer to form the shallow trench isolation regions 32 which are separated by oxide regions 70 a, 70 b (FIG. 13).
http://www.w3.org/ns/prov#wasQuotedFrom
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