| http://www.w3.org/ns/prov#value | - The diode's p-type silicon layer 11 is connected to the MTJ 8 via a ohmic contact layer 12 which would include a barrier layer such as titanium nitride, It is beneficial for the contact layer 12 and the diode 7 to be thin to reduce spacing between the word line and MTJ. The diode's n-type silicon layer 10 is connected to word line 3.
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