| http://www.w3.org/ns/prov#value | - Specifically, the heterojunction structure of FIG. 7(a) comprises a semiconductor substrate 10, doped contact regions 23 which can be formed by conventional methods, i.e. ion implantation, or the method of the present invention, and a lateral, tapped-in p-n-p region 24 which is formed using the present method.
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