| http://www.w3.org/ns/prov#value | - According to the invention, the device of FIG. 7 also has on the side of the upper optical confinement layer 40, a n-doped InP layer 46, whose thickness is e.g. 50 nm and which is periodically etched and covered by p-doped InP material of the upper optical confinement layer 40, thus forming a grating constituted by n-doped InP zones separated by p-doped InP zones.
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