About: http://webisa.webdatacommons.org/175259500

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	Since devices such as the IGBT are susceptible to latch-up, Si-Ge layer may have the added benefit of reducing the turn-off time when they are commutating and decrease the chances of latch-up.
http://www.w3.org/ns/prov#wasQuotedFrom	google.es