| http://www.w3.org/ns/prov#value | - An etching device 10 shown in FIG. 1 comprises a process chamber 11 made of a conductive material such as aluminum, a lower electrode 12 located on the bottom surface of the process chamber 11 and also serving as a susceptor for mounting thereon a semiconductor wafer W, and an upper electrode 13 located above the lower electrode 12 with a predetermined distance therefrom.
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