| http://www.w3.org/ns/prov#value | - In particular, there is a need for a method which prevents problems, such as shorting between gate stack components, that occur when a misaligned self-aligncontact etch unintentionally removes an oxide seam or spacer.SUMMARY OF THE INVENTIONThe present invention provides methods of preventing a short from occurring in a gate stack during a self-align contact etch process.
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