| http://www.w3.org/ns/prov#value | - In the case where the spot-shaped or linear laser beam or beams having a wavelength 400 nm or less are used, the absorption coefficient of the non-single-crystal semiconductor layer member 11 for the laser beam or beams is also large as is the case with the aforementioned conductive layer member 3, because the laser beam used has a short wavelength such as 400 nm or less.
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