| http://www.w3.org/ns/prov#value | - With continued reference to FIGS. 22A and 22B, pattern transfer can be accomplished using an anisotropic etch, e.g., a BCl3/Cl2 plasma etch if the substrate to be etch is a semiconductor wafer or a conductor, to selectively etch the substrate 310 through the pattern formed in the transfer layer 320.
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