| http://www.w3.org/ns/prov#value | - Dig., p. 247??? by Ito et al reports that as a compressive stress in a contact etch stopper film is made large, which film is a silicon nitride film formed by plasma-enhanced (PE) chemical vapor deposition (CVD) and a compressive stress film, a compressive stress is exerted along a gate length direction so that an on-current of p-MOS increases and an on-current of n-MOS decreases.
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