PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • Accordingly, there is a need to protect the gate electrode from fluorine containing implants to prevent penetration thereof through the gate dielectric reaching the channel region (therebelow) in the substrate of the FET device.
http://www.w3.org/ns/prov#wasQuotedFrom
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