| http://www.w3.org/ns/prov#value | - 20130056702ATOMIC LAYER DEPOSITION OF METAL OXIDE MATERIALS FOR MEMORY APPLICATIONS - Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks.
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