| http://www.w3.org/ns/prov#value | - A light-emitting device of gallium nitride compound semiconductor according to claim 4, wherein said second electrode layer is made of one of Al and an alloy containing Al, and said first electrode has an over layer which is made of one of Ni, Ag, Ti, an alloy including Ni, an alloy including Ag, and an alloy including Ti.
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