| http://www.w3.org/ns/prov#value | - After depositing n-type collector layer 31 and p-type base layer 32 on a semi-insulating GaAs substrate 30 using organometallic vapor phase epitaxy (OMVPE) or molecular beam epitaxy (MBE), for example, a masking layer 33 formed of a material such as silicon nitride or silicon dioxide to a thickness of 3000 ???, for example, is deposited on base layer 32.
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