About: http://webisa.webdatacommons.org/191902755

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	According to the above points, it was confirmed that the method for forming the thin film transistor of the present invention was excellent in the characteristics such as the mobility of carriers, the breakdown voltage, and the like.
http://www.w3.org/ns/prov#wasQuotedFrom	google.fr