| http://www.w3.org/ns/prov#value | - The read operation for memory cells in the array 10 of FIG. 1 may be performed by placing a voltage such as 0V on the volatile pull-up row line associated with the row including a cell to be read and placing a voltage such as +3.3V on the volatile pull-up row line associated with rows including cells where the read operation is to be inhibited.
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