About: http://webisa.webdatacommons.org/193145302

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention is directed generally to a semiconductor device and method of manufacture thereof, and more particularly to such a device and method having a thin gate oxide.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com