| http://www.w3.org/ns/prov#value | - As shown in FIG. 4A, an inorganic insulating material such as silicon oxide SiOx or silicon nitride SiNx may be deposited on an entire surface of the insulating substrate 111 including the semiconductor layer 154 by a PEVD process (Plasma Enhanced Chemical Vapor Deposition), to form a gate insulating layer 113.
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