About: http://webisa.webdatacommons.org/203568279

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention relates to high density memory devices based on phase change based memory materials, including chalcogenide based materials and on other programmable resistive materials, and methods for manufacturing such devices.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com