| http://www.w3.org/ns/prov#value | - The n-well 4n is formed by providing an ion implanting mask for exposing only a region for the n-well 4n on the semiconductor substrate 1, then implanting n-type impurities such as phosphorus, for example, into the semiconductor substrate 1 by an ion implanting method, and then annealing the semiconductor substrate 1.
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