| http://www.w3.org/ns/prov#value | - A process gas is introduced into a reaction chamber containing a susceptor having a first region on which a semiconductor substrate is placed and a second region other than the first region, upon which a ceramics insulator is placed....http://www.google.com/patents/US6432493?utm_source=gb-gplus-sharePatent US6432493 - Method of carrying out plasma-enhanced chemical vapor depositionAdvanced Patent
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