| http://www.w3.org/ns/prov#value | - performing a third ion implant process to expose regions other than the region in which the second well region is formed in the cell region and the first doped region on the result on which the second ion implant process is performed, thereby forming a fourth well region in a region adjacent the second well region and a second doped region in the first doped region, whereby the doped region is def
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