| http://www.w3.org/ns/prov#value | - 001Apr 1, 2003Motorola, Inc.Dielectric layer of lanthanum aluminate over the semiconductor substrate; and an electrode layer over the dielectric layerUS6548825 *Jun 5, 2000Apr 15, 2003Matsushita Electric Industrial Co., Ltd.Semiconductor device including barrier layer having dispersed particlesUS6586797Aug 30, 2001Jul 1, 2003Micron Technology, Inc.Graded composition gate insulators to reduce tunne
|
