| http://www.w3.org/ns/prov#value | - A process for the formation of an interconnect in a semiconductor structure including the steps of forming a dielectric layer on a substrate, forming a first barrier layer on the dielectric layer, forming a second barrier layer on the first barrier layer, wherein the second barrier layer is selected from the group consisting of ruthenium, platinum, palladium, rhodium and iridium and wherein the fo
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