| http://www.w3.org/ns/prov#value | - Specifically, the mask film may be formed of tungsten, molybdenum, niobium, tungsten silicide, molybdenum silicide, or niobium silicide. [0051] Method of Forming Seed Layer including Gap Layer [0052] Next, the Group III nitride layer having gaps in its portions other than the convex portions is formed by growing a second semiconductor layer from upper surfaces of the convex portions of the first s
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