| http://www.w3.org/ns/prov#value | - Specifically, isolation regions are partitioned using a technique such as photolithography and the single crystalline silicon layer 14 of the isolation regions is etched away using a technique such as reactive ion etching (RIE), followed by embedding an isolation silicon oxide film 100 by a technique such as chemical vapor deposition (CVD) and flattening by a technique such as chemical mechanical
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