| http://www.w3.org/ns/prov#value | - A p-type (AlxGa1???x)vIn1???vP current spreading layer (x=0.05; v=0.95; thickness: 7 ??m; dopant concentration 5???1018 cm???3) 10 is regrown in such a manner as to cover the top of the p-type (AlxGa1???x)vIn1???vP current spreading layer, which has been exposed by removing the n-type GaP current blocking layer 9, as well as the n-type GaP current blocking layer 9. [0015] Finally, on the p-type cu
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