| http://www.w3.org/ns/prov#value | - 2008Applied Materials, Inc.Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltageUS73234018 Ago 200529 Ene 2008Applied Materials, Inc.Semiconductor substrate process using a low temperature deposited carbon-containing hard maskUS73356118 Ago 200526 Feb 2008Applied Materials, Inc.Copper conductor annealing process employing high spe
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