| http://www.w3.org/ns/prov#value | - present invention is to provide a practical method of manufacturing a semiconductor device utilizing a single fabrication process flow, so that an IGFET and an NDR-FET can be formed on a common substrate. [0033] For achieving the first object, the invention provides a semiconductor device comprising an IGFET including a gate and source/drain electrodes, and an NDR-FET including gate and source/dr
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