| http://www.w3.org/ns/prov#value | - A production method for a semiconductor laser device of the present invention comprises the steps of: forming, on a substrate, a multi-layer structure including at least an active layer and a light confinement layer; processing the multi-layer structure into a striped shape such that a width W1 at a front end face and a width W2 at a rear end face satisfy a relationship of W1<W2, the striped shape
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