| http://www.w3.org/ns/prov#value | - A plasma processing method according to claim 1, wherein the high-frequency power having the frequency of 50 MHz to 3 GHz is supplied to the antenna via a through hole provided at a site of a dielectric other than a center and a periphery of the dielectric, with the antenna provided within the vacuum chamber and with the dielectric sandwiched between the antenna and the vacuum chamber, wherein the
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