| http://www.w3.org/ns/prov#value | - providing a semiconductor substrate having a dielectric layer, depositing a metal stack including reacted titanium aluminide, patterning and etching to form interconnection lines, depositing one or more dielectric layers, patterning and etching the dielectric to form a via hole to contact an interconnection line, depositing a seed layer and a via-barrier layer at a controlled temperature, low enou
|
