| http://www.w3.org/ns/prov#value | - properties of the semiconductor (such as an active matrix substrate and a three-dimensional LSI) as well. [0181] Embodiment 2 [0182] Hereinafter, a second specific preferred embodiment of the present invention will be described. [0183] The second preferred embodiment of the present invention is a method of fabricating a CMOS circuit, in which an n-channel TFT and a p-channel TFT are arranged as a
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