| http://www.w3.org/ns/prov#value | - A process for the fabrication of a semiconductor integrated circuit device, which comprises following steps: (a) forming a first film made mainly of silicon over a silicon-oxide-film-containing gate insulation film formed over the silicon surface of a semiconductor wafer; (b) forming a refractory metal film over the polysilicon film directly or through a barrier layer; (c) forming a gate electrode
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