| http://www.w3.org/ns/prov#value | - Specifically, for example, a film formed of a high-k material such as hafnium oxide or a stack including a film formed of a high-k material such as hafnium oxide and a film formed of an oxide semiconductor is used for the insulating film included in the capacitor 1020 so that ??r1 can be set to 10 or more, preferably 15 or more, and silicon oxide is used for the insulating film forming the gate ca
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