| http://www.w3.org/ns/prov#value | - Typically, the difference between the memory cell output signals is relatively small, for example, 0.3-0.7 volts for differential sense amplifiers that use insulated gate field-effect transistors (IGFET) and 0.1 volt or less for differential sense amplifiers that are other types of transistors, such as bipolar transistors.
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