About: http://webisa.webdatacommons.org/211612021

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention is a phase change memory device and method of making same that utilizes a thin layer of memory material and air insulation to minimize cell size and program disturb affects.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com