| http://www.w3.org/ns/prov#value | - The invention is directed to a semiconductor device and methods for manufacturing a semiconductor device with improved device performance, and more particularly to a semiconductor device comprising at least one capacitor (e.g., metal-on-insulator (MIM) cap or vertical-parallel-plate (VPP) cap) formed in wiring levels on a silicon-on-insulator (SOI) substrate.
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