| http://www.w3.org/ns/prov#value | - FIG. 1 is a schematic cross sectional view illustrating structure the of a light-emitting diode which is a gallium nitride type semiconductor device embodying the present invention and has (Gal-x Alx)l-y Iny N (0???x???1, 0???y=1, excluding the case of x=1 and y=0) formed on a Si substrate;
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