About: http://webisa.webdatacommons.org/213768992

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	A gate insulating film 111 is formed of an insulating film, as of silicon dioxide, SiN, tantalum oxide or others, in a 50 to 300 nm thickness by CVD, sputtering or other techniques.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com