| http://www.w3.org/ns/prov#value | - Thus, this method has an advantage inincreasing the productivity.Moreover, this method makes it possible to remove even the film deposited inside the narrow gaps and effectively suppress the generation of particles.When the in-situ cleaning method is applied to a plasma CVD apparatus used for forming, for example, a silicon film or a silicon nitride film, a cleaning gas such as NF.sub.3, CF.sub
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