| http://www.w3.org/ns/prov#value | - The process according to claim 26, wherein the substrate is a sapphire substrate and the semiconductor material includes a layer of a Ga compound selected from the group consisting of GaN and InxGa1???xN, and the irradiating step comprises separating the semiconductor from the sapphire substrate by exposing through the substrate with a third harmonic of a Nd:YAG laser at a wavelength of 355 nm.
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