PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • Therefore, the base film 501 is formed of an insulating film such as silicon oxide, silicon nitride, silicon nitride oxide or the like which can prevent diffusion of alkaline metal or alkaline-earth metal to the semiconductor film.
http://www.w3.org/ns/prov#wasQuotedFrom
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