| http://www.w3.org/ns/prov#value | - This leakage current can be blocked from diffusing into the device layer of the disclosed approach by depositing an insulator layer such as silicon nitride or silicon oxide on the surface of the substrate that is to be bonded to the back surface of the thinned wafer. [0049] Optionally, the method comprises reducing the surface roughness the back surface of the wafer.
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