| http://www.w3.org/ns/prov#value | - The metal portions of the gate structures are formed from an initial starting material that is either a metal boride or a metal nitride, after which the starting material is provided with boron or nitrogen in one of the PMOS and NMOS regions through implantation, diffusion, or other techniques, either before or after formation of the conductive upper material, and before or after gate patterning.
|
