PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The lightly doped source and drain areas 17 for the N-FETs are formed by ion implantation of an N-type dopant, such as arsenic (As) or phosphorus (P).
http://www.w3.org/ns/prov#wasQuotedFrom
  • google.es