| http://www.w3.org/ns/prov#value | - BACKGROUND OF THE INVENTION [0001] The present invention relates in general to field effect transistors, and in particular trench transistors and methods of their manufacture. [0002]FIG. 1 is a simplified cross section of a portion of a conventional metal-oxide-semiconductor field-effect transistor (???MOSFET???) trench transistor.
|
