| http://www.w3.org/ns/prov#value | - The gate insulator 119 is formed on the entire surface of the first substrate 110 by depositing an inorganic material such as SiNx or SiOx, and the semiconductor layer 112 and the ohmic contact layer 113 are formed by depositing and patterning an amorphous silicon, and an impurity amorphous silicon by PCVD (plasma chemical vapor deposition) method (S2).
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