About: http://webisa.webdatacommons.org/225372613

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	FIELD OF INVENTION The present invention relates generally to semiconductor devices and more particularly to doped silicide MOS transistor gates and fabrication methods for making the same.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com