| http://www.w3.org/ns/prov#value | - 20140124848ELECTRICALLY PROGRAMMABLE AND ERASEABLE MEMORY DEVICE - The present claimed subject matter is directed to memory device that includes substrate, a tunneling layer over the substrate, a floating gate over the tunneling layer, a dielectric over the floating gate and including silicon oxynitride, and a control gate over the dielectric.05-08-2014
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